徐儒

Doctoral Degree in Engineering

With Certificate of Graduation for Doctorate Study

Personal Information

Gender:Male
Business Address:信息科技大楼711

VIEW MORE

Personal Profile

徐儒,男,博士,南京大学博士后。博士毕业于南京大学,目前在南京信息工程大学电子与信息工程学院微电子系从事教学科研工作。主要从事氮化物半导体固体电子学与功率电子器件、氮化物半导体照明和光电探测器件研究,特别在优化GaN肖特基二极管(包括横向和准垂直结构)的器件结构及制备方面取得了一系列的开创性成果,目前在Small,IEEE Electron Device Letters等期刊发表论文多篇,主持及参与纵向科研项目4项。


项目:

1. 中国博士后科学基金第73批面上项目,2023-2024,主持;

2. 江苏省双创博士计划,2022-2024,主持;

3. 江苏省光电信息功能材料重点实验室开放课题,2023-2024,主持;

4. 校人才启动经费,2021-2024,主持;

5. 国家重点研发计划,2022YFE0122700,2023-2024,参与;

6. 国家自然科学基金面上项目,12074182,2021-2024,参与。


部分代表性论文如下:

[1] Ru Xu, Peng Chen*, et.al ,  High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral  Schottky Barrier Diode with Single Channel and Sub‐100‐μm Anode‐to‐Cathode Spacing, Small, 2022, 18(37): 2270199. (SCI一区TOP,Back Cover Paper)

[2] Ru Xu, Peng Chen*, et.al , 3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure, IEEE Electron Device Letters, 2021, 42(2): 208-211. (SCI二区TOP)

[3] Ru Xu, Peng Chen*, et.al , 2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure, Solid-State Electronics, 2021, 175: 0-107953. (SCI三区)

[4] Ru Xu, Peng Chen*, et.al  1.4-kV Quasi-Vertical  GaN Schottky Barrier Diode With Reverse p-n Junction Termination, IEEE Journal of the Electron Devices Society, 2020, 8(1): 316-320.(SCI三区)

[5] Yimeng Li, Peng Chen,* Xiufang Chen,* Ru Xu, et.al., “High-Responsivity Graphene/4H-SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields”, Advanced Optical Materials, 2000559, 2020; (SCI一区TOP)


教学工作:

本科生课程:《数字IC验证方法学》、《FPGA逻辑设计与验证》、《嵌入式系统》、《电子测量技术基础》


硕士招生:

欢迎报考研究生,邮箱:xuru@nuist.edu.cn











No Content

No Content

No Content

No Content