中文
Home > Scientific Research > Paper Publications

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2−BN−Graphene van der Waals Heterostructures

Hits:

  • DOI Number:10.1021/acs.nanolett.1c04737

  • Journal:Nano Letters

  • Indexed by:Journal paper

  • Document Type:J

  • Volume:22

  • Page Number:2328−2333

  • Translation or Not:no

  • Date of Publication:2022-03-07

  • Included Journals:SCI

    • Attachments:

  • NL-Multifunctional Half-Floating-Gate FET.pdf  Download[]Times

  • Telephone:

  • Email:
Copyright©2019 Nanjing University of Information Science and Technology·Network Information Center Click:
  MOBILE Version

The Last Update Time:..