南京信息工程大学主页平台管理系统 zhangzhang--Home-- Lili Yang, Shan Li, Muzi Li, Maolin Zhang, Zeng Liu, Zhang Zhang* and Weihua Tang; Sn doping induced interfacial barrier height tailoring in Ga2O3 deep-ultraviolet photodetector [J]. Science China Materials, 2025. https://doi.org/10.1007/ s40843-025-3509-0

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Paper Publications

Lili Yang, Shan Li, Muzi Li, Maolin Zhang, Zeng Liu, Zhang Zhang* and Weihua Tang; Sn doping induced interfacial barrier height tailoring in Ga2O3 deep-ultraviolet photodetector [J]. Science China Materials, 2025. https://doi.org/10.1007/ s40843-025-3509-0

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Pre One:Li, Min；Yan, Sihan；Li, Muzi；Xi, Zhaoying; Li, Shan；Zhang, Zhang*；Xu, Meng；Yang, Lili；Tang, Weihua; Co-doping improves memory characteristics in InSn-Ga2O3 detector via multiple impurity energy levels [J]. Science China Technological Sciences , 2025. (Accept)

Next One:Zhang Zhang; Lili Yang; Zeng Liu; Xi'an Wang; Haosu Luo; Yaojin Wang; Theoretical analysis of bulk acoustic wave resonators with emerging ε-Ga2O3 piezoelectric film [J]. Applied Physics Letters , 2024, 124(3): 033502.

张章

Date of Birth:1994-08-29 Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Alma Mater:中国科学院大学 Degree:Doctoral Degree in Science Status:在岗 School/Department:集成电路学院 Business Address:学科二号楼N312 Contact Information:TEL：18616279158 WX：z18616279158 E-Mail:004043@nuist.edu.cn

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Lili Yang, Shan Li, Muzi Li, Maolin Zhang, Zeng Liu, Zhang Zhang* and Weihua Tang; Sn doping induced interfacial barrier height tailoring in Ga2O3 deep-ultraviolet photodetector [J]. Science China Materials, 2025. https://doi.org/10.1007/ s40843-025-3509-0