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>> Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator
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Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the gate insulator
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Release Time:2019-11-20
Affiliation of Author(s):
电子与信息工程学院
Journal:
2016 10th International Conference on Sensing Technology, ICST ,IEEE
Funded by:
其他课题
Note:
Conference article
First Author:
刘向
Document Code:
36611
Issue:
0
Page Number:
1
Translation or Not:
no
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