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刘向.Narrow-Band QD-Enhanced PIN Metal-Oxide Heterostructure Phototransistor with the Assistance of Pr....ADVANCED OPTICAL MATERIALS,8(4):8p
刘向.Infrared phototransistor induced by MoS2 quantum dots encapsulated in lead iodide perovskite.IEEE Electron Device Letters,40(5):746-749
刘向.High sensitive solar blind phototransistor based on ZnO nanorods/IGZO heterostructure annealed by....Materials Letters,228(-):451-455
刘向. Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZn....APPLIED PHYSICS LETTERS,101(11):文献号:113501
刘向.A highly sensitive and fast graphene nanoribbon/CsPbBr3 quantum dot phototransistor with enhanced....NANOSCALE,10(21):10182-10189
刘向.Highly sensitive visible and near-infrared photo-FET based on PbS quantum dots embedded in the ga....2016 10th International Conference on Sensing Technology, ICST ,IEEE(0):1
刘向.A FET Structure Field Emission Device With High-Speed Pulse Signal Control.IEEE ELECTRON DEVICE LETTERS,34(4):550-552
刘向.High-Performance Ge Quantum Dot Decorated Graphene/Zinc-Oxide Heterostructure Infrared Photodetec....ACS APPLIED MATERIALS & INTERFACES,7(4):2452-2458
刘向.Graphene nanomesh photodetector with effective charge tunnelling from quantum dots.NANOSCALE,7(9):4242-4249
刘向.High Efficiency Light-Emitting Transistor with Vertical Metal–Oxide Heterostructure.Small,14(22):文献号: 1800265
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