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>> Infrared phototransistor induced by MoS2 quantum dots encapsulated in lead iodide perovskite
Paper Publications
Infrared phototransistor induced by MoS2 quantum dots encapsulated in lead iodide perovskite
Hits:
Release Time:2019-11-20
Affiliation of Author(s):
电子与信息工程学院
Journal:
IEEE Electron Device Letters
Funded by:
省、市、自治区科技项目
Note:
通讯作者:刘向
First Author:
刘向
Document Code:
39236
Volume:
40
Issue:
5
Page Number:
746-749
Number of Words:
10000
Translation or Not:
no
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