南京信息工程大学主页平台管理系统 Zhao Jianguo--Home-- Jianguo Zhao, Kai Chen, et al., "Epitaxial growth and characteristics of nonpolar a-plane InGaN films with blue-green-red emission and entire In content range". Chinese Physics Letters, 2022, 39(4): 048101，T3、中科院二区SCI期刊，IF：3.5

赵见国Associate professor

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Jianguo Zhao, Kai Chen, et al., "Epitaxial growth and characteristics of nonpolar a-plane InGaN films with blue-green-red emission and entire In content range". Chinese Physics Letters, 2022, 39(4): 048101，T3、中科院二区SCI期刊，IF：3.5

Date of Publication:2024-11-18Hits:

Title of Paper:Jianguo Zhao, Kai Chen, et al., "Epitaxial growth and characteristics of nonpolar a-plane InGaN films with blue-green-red emission and entire In content range". Chinese Physics Letters, 2022, 39(4): 048101，T3、中科院二区SCI期刊，IF：3.5
Translation or Not:no

Pre One:: Jianguo Zhao(*), Boyan Suo, et al., "Effects of Buffer Layer on Structural Properties of Nonpolar (11-20)-Plane GaN Film". Crystals, 2023, 13(7): 1145，T3、中科院三区SCI期刊，IF：2.7

Next One:: Jianguo Zhao, Jiangyong Pan, et al., "Improved Optical Properties of Nonpolar AlGaN-Based Multiple Quantum Wells Emitting at 280 nm". IEEE Photonics Journal, 2021, 13(1): 2300107.