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赵见国
Associate professor
· Patents
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发明授权：张雄 赵见国 崔一平，一种GaN基绝缘栅双极型晶体管及其加工方法，ZL201810776006.6
Date:2024-11-18
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发明授权：张雄 赵见国 崔一平，一种氮化镓基高电子迁移率晶体管，ZL201810004329.3
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发明授权：赵见国 孙智江 吴自力，一种微型发光二极管显示器结构及制作方法，ZL201610759300.7
